image sensor has reduced optical crosstalk and spectral

Integrated image sensor comprising adjacent pixels, each pixel (5) having a semiconductor active region (7) containing a photodiode (8), an antireflection layer (13) above the photodiode (8), a dielectric region (14,15) above the antiglare layer and an optical filter (19) for passing an incident light beam (25) having a given wavelength. The antireflection layer (13) comprises an array of dots (24) mutually separated by a dielectric material (14) of said dielectric region, said network being configured to permit both transmission of said incident light radiation and a diffraction of the incident light radiation (25) producing diffracted rays having lower wavelength than the incident radiation and attenuated with respect to incident radiation.