Properties of H+ implanted 4H-SiC as related to exfoliation of thin crystalline films

aInstitute for Advanced Materials, Devices, and Nanotechnology (IAMDN), Rutgers University, New Brunswick, New Jersey 08901, USA bDepartment of Materials Science and Engineering, Rutgers University, New Brunswick, New Jersey 08901, USA cDepartment of Chemistry, Rutgers University, New Brunswick, New Jersey 08901, USA dDepartment of Physics, Rutgers University, New Brunswick, New Jersey 08901, USA eInstitute of Electron Technology/Institute of Physics PAS, Warsaw, Poland