A MEMS digital mirror array integrated with high-voltage level-shifter

This paper reports the design, fabrication and demonstration of MEMS electrostatic digital mirror array (8 channels) integrated with 40V level-shifter drivers by the CMOS-first MEMS-last processing technique. A CMOS chip of high voltage level-shifter array (2.9 mm × 2.9 mm) was pre-fabricated on an 8-µm-thick SOI wafer, and micromechianical structures were post-processed by deep reactive ion etching (DRIE) in the nearby reticle area for monolithic integration. The mirror array has been developed for a fiber-optic wavelength selective switch (WSS) application.