Band-offsets of GaInAsBi–InP heterojunctions

Abstract The alignment of band edges in bismide-based Ga 0.47 In 0.53 As 1−x Bi x –( Ga 0.47 In 0.53 As )–InP heterostructures is examined experimentally by THz emission spectroscopy technique. The determined band offsets of Ga 0.47 In 0.53 As 1 - x Bi x –InP heterojunctions at the x = 0 - 0.06 bismuth concentrations correspond to the ≈ 0.38 value of Q-parameter, which is defined as the relative conduction band offset with respect to energy gap difference in unstrained heterostructure. The relative conduction band offset is smaller for strained GaInAsBi layers, – it reduces to about 34 % at the bismuth concentration of x = 0.06 . The band offsets of Ga 0.47 In 0.53 As 1 - x Bi x – Ga 0.47 In 0.53 As heterojunctions are estimated to correspond to the same value of Q-parameter, Q ≈ 0.38 , while the strains are expected to reduce the relative conduction band offset down to about 25 % at the x = 0.06 Bi concentration.