Electroluminescence of InAsSb-based mid-infrared LEDs in 4.2–300 K temperature range

Electroluminescence of mid-infrared LEDs with active layer made of InAs and InAsSb in a wide temperature range (4.2–300 K) was studied. At low temperatures (T=4.2–100 K), stimulated emission from the LEDs was observed. The emission became spontaneous at higher temperatures due to the effect of CHHS Auger recombination process, when the energy of a recombining electron-hole pair was transferred to another hole with the latter transitioning to the spin-orbit-splitted band. The spontaneous character of recombination held up to the room temperature due to the effect of other Auger processes. Still, the results obtained show that structures based on InAsSb are a promising material for fabrication of mid-infrared lasers.