A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE

We report a high power Ku band internally matched power amplifier（IMPA） with high power added efficiency（PAE） using 0.3μm AlGaN/GaN high electron mobility transistors（HEMTs） on 6H-SiC substrate.The internal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm.To improve the bandwidth of the amplifier,a T type pre-matching network is used at the input and output circuits,respectively.After optimization by a three-dimensional electromagnetic（3D-EM） simulator,the amplifier demonstrates a maximum output power of 42.5 dBm（17.8 W）,PAE of 30%to 36.4%and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10%duty cycle pulse condition when operated at Vds = 30 V and Vgs=—4 V.At such a power level and PAE,the amplifier exhibits a power density of 4.45 W/mm.