Method for preparing copper-gallium-selenium optoelectronic film from copper nitrate and gallium chloride

The invention discloses a method for preparing a copper-gallium-selenium optoelectronic film from copper nitrate and gallium chloride, and belongs to the technical field of optoelectronic film preparation for solar cells. The method comprises the following steps: firstly washing a glass substrate, then putting copper nitrate, gallium chloride and selenium dioxide into a solvent, adjusting the pH value to be 4.0 to 7.0, using a spin-coating method to obtain a precursor film on the glass substrate, drying and putting in a closeable container with hydrazine hydrates so that the precursor film sample is not in contact with the hydrates, putting the closeable container filled with the sample in a baking oven for carrying out heating and insulation treatment, and finally taking out the sample for drying so as to obtain the copper-gallium-selenium optoelectronic film. The method does not need the conditions of high temperature and high vacuum, and the method is low in requirement for instrument equipment, low in production cost, high in production efficiency and easy to operate. The obtained copper-gallium-selenium optoelectronic film has higher continuity and uniformity, the principle phase is a copper-gallium-selenium phase, the composition and structure of the target product are easily controlled through the new process, and the production method which is low in cost and can realize industrialization is provided for preparing the high-performance copper-gallium-selenium optoelectronic film.