Modification of the optical and luminescent properties of beryllium oxide crystals by implantation of Zn and Li ions

Abstract BeO single crystals were implanted at 295 K with either Zn or Li ions. Rutherford backscattering/channelling of helium ions was used to study lattice locations of the implanted Zn atoms. All the implanted atoms were found to occupy only regular positions of the BeO-lattice. Spectra of photoluminescence (PL), PL excitation, and X-ray luminescence from the Zn and Li implanted and non-implanted BeO crystals were studied in comparison with those for BeO crystals doped with Zn and Li. The PL-bands associated with radiation defects related to the Zn and Li implanted atoms were detected and identified. A theoretical study of the evolution of the implanted Zn and Li atoms in the BeO lattice was made using the molecular static and molecular dynamic techniques. The effect of the radiation defects related to the implanted Zn and Li ions on the optical and luminescence properties of BeO crystals has been discussed.