Point Defect Generation During Si Oxidation and Oxynitridation

In this work we investigate the influence of interfacial nitrogen on the point defect injection kinetics during thermal oxidation of silicon in the high temperature regime (1050o-1150oC). Two different oxide growth techniques that introduce nitrogen at the interfacial region are investigated: a) N20 oxidation and b) dry oxidation of N2 implanted silicon. The interstitials that are injected during the oxidation process are monitored by the growth of pre-existing Oxidation Stacking Faults. We show that the existence of nitrogen at the interface can lead to an enhancement of the supersaturation of silicon interstitials at high temperatures (1050o-1150oC). The formation of a nitrogen rich layer at the interface alters the recombination processes for self-interstitials, and more interstitial atoms diffuse into the substrate. However, for N20 oxidations and at lower temperatures this phenomenon is reversed and reduced supersaturation ratios are obtained.