Method for accurately controlling ion implantation distribution uniformity

The invention, which relates to an ion implantation machine and belongs to the semiconductor manufacturing field, discloses a method for accurately controlling ion implantation distribution uniformity. The method is characterized by: high-precision multichannel beam and dosage acquisition, generation of W scanning waveform, detection and correction of horizontal direction beam distribution density, beam parallelism detection, and synchronization of horizontal scanning and vertical scanning. The system comprises: a mobile Faraday cup, a closed loop Faraday cup, a sampling Faraday cup, a dosage controller, a position synchronization plate, a linear motor and a NI PXI real time measurement and control system. By using the method of the invention, accurate detection of ion dosage of the ion implantation can be automatically realized; control of the ion implantation distribution uniformity and dosage accuracy can be automatically realized.