Silylation of three component e-beam resists: application to Shipley SAL 601

Abstract Three component resists are good candidates for selective silylation of E-beam resists. They are highly sensitive and undergo crosslinking in the exposed areas. SAL 601 resist has been chosen to demonstrate the selectivity to silylation after exposure. The influence of HMDS and silylation time are discussed. The performance of RIE and MIE etchers for the development and transfer of halfmicron silylated patterns is compared. The results are applied in a developmental environment, using an MIE process.