Space charge limited current in Schottky diode with single level traps

The space charge limited current (SCLC) in a Schottky diode with a finite injection barrier at the injecting contact and single level traps in the energy space has been investigated by mathematical modelling. Solution of coupled Poisson’s and continuity equations with non-zero Schottky barrier (φ) leaded us to calculate the electric field [F(x)] and the charge carrier p(x) distribution in the sample. Considering the boundary conditions, the current density-voltage (J-V) characteristics have been calculated numerically. It is reported here that when Schottky barrier is not zero, J-V characteristics become Ohmic at infinitely large voltages. The expression of trap filled limit voltage (VTFL) has also been derived. The effect of Schottky barrier on the SCLC current in semiconducting devices has been studied in the present paper.