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Properties of N- and P-Channel MOSFETs with Ultrathin RTCVD Oxynitride Gate Dielectrics
Properties of N- and P-Channel MOSFETs with Ultrathin RTCVD Oxynitride Gate Dielectrics
1999
Eric M. Vogel
J. J. Wortman
Keywords:
MOSFET
Dielectric
Quantum tunnelling
Electronic engineering
Materials science
Communication channel
Capacitance
p channel
Optoelectronics
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