Old Web
English
Sign In
Acemap
>
Paper
>
Defect Curing Effects on High-k Gate Stack (Al/Al2O3/Si-sub) by Using H2 Plasma Treatment and Rapid Thermal Anneal
Defect Curing Effects on High-k Gate Stack (Al/Al2O3/Si-sub) by Using H2 Plasma Treatment and Rapid Thermal Anneal
2020
Rock-Hyun Baek
Kyeong-Keun Choi
Bohyeon Kang
Anjehyun
Keywords:
High-κ dielectric
Curing (food preservation)
Optoelectronics
Thermal
Materials science
Annealing (metallurgy)
plasma treatment
gate stack
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]