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The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors
The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors
1989
C. Kusano
Hiroshi Mizuta
Ken Yamaguchi
Keywords:
Heterojunction
Doping
Heterostructure-emitter bipolar transistor
Electronic engineering
Bipolar junction transistor
Common emitter
Materials science
Optoelectronics
algaas gaas
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