Computer Modelling of Laser Annealing

Heat flow calculations, based on the main assumption that the energy of the incident pulse is instantaneously and locally converted into heat, are used to review the results of laser pulse annealing and impurities behaviour in ion implanted semiconductors. The crystallization behaviour of amorphous layers, the velocity of the solid-liquid interface and impurity redistribution are detailed with the main emphasis on the relevance of the parameters (laser wavelen gth, pulse duration and energy density, substrate temperature, etc.) that can be experimentally controlled. Comparison with the latest experimental results is also given.