Epitaxial Ge Films on Si Substrates
1987
Thin films of germanium have been prepared using an ultrahigh vacuum ionized-cluster beam (ICB) system. The dopant concentration of the films was varied by alloying the germanium source material with aluminum, a p-type dopant. X-ray diffraction analysis of the films has shown that an epitaxial (100) germanium film can be deposited on a (100) silicon substrate with a substrate temperature as low as 300°C. The results confirm that ICM deposition can be used to prepare epitaxial germanium films, but ionization of the clusters does not appear to affect the film growth.
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