Carbon interstitial in electron-irradiated silicon

Abstract Using photo-EPR measurements on the Si-G12 spectrum in electron-irradiated silicon, it is shown that the carbon interstitial, already known to form a 〈100〉-interstitialcy, also give rise to an electrical level at ( E ν + 0.30)eV. We estimated the hole capture cross section of the defect to be σ p ⩾10 −17 cm 2 , using deep-level transient spectroscopy.