Low noise InAlAs/InGaAs HEMTs grown by MOVPE

We have demonstrated the MOVPE growth of high quality InAlAs/InGaAs on InP HEMT devices that are suitable for low noise amplifier applications. We have developed a growth process to reduce unwanted residual background charge typically found in MOVPE grown InAlAs/InGaAs HEMT structures to less than 9E9 cm/sup -2/. We have demonstrated the growth of HEMT devices over a wide range of sheet charge (/spl sim/4E10-4E12 cm/sup -2/) while maintaining Hall mobilities greater than 10,500 cm/sup 2//Vs. HEMT devices with gate length of 0.15 /spl mu/m were fabricated and tested. Excellent device performance is observed. Noise performance was measured from 226 GHz and S-parameter data was taken from 0.5-40 GHz. The unity current cutoff frequency of 108 GHz and minimum noise figure of 1.3 dB with associated gain of more than 10 dB at 26 GHz demonstrate that the MOVPE growth technique can be applied to the low cost production of InAlAs/InGaAs HEMT for RF and low noise amplifier applications.