Photoluminescence studies on AlxGa1−xSb alloys

Abstract Photoluminescence experiments have been performed on aluminum gallium antimonide alloy (Al x Ga 1− x Sb) at low temperatures for compositions ranging from x = 0 to 0.53. This work permits the determination of the composition dependence of the direct band gap E O and gives evidence for the occurence of two bands L and X minima for indirect energy gaps. We deduce cross-over points at x = 0.21, between the Γ and L bands, and at x = 0.40 between the L and X bands.