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Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO on In{sub 0.53}Ga{sub 0.47}As
Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO on In{sub 0.53}Ga{sub 0.47}As
2008
Kyung-Hyuk Lee
Young-Joo Lee
P. Chang
Mei Huang
Yin-Cheng Chang
Meng-Yuan Hong
J. Kwo
Keywords:
Thin film
Physics
Capacitive sensing
Analytical chemistry
High-resolution transmission electron microscopy
X-ray photoelectron spectroscopy
Silicon oxide
Transmission electron microscopy
Indium phosphide
Gallium arsenide
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