Phase change film of the phase change memory device forming method

The phase change of the phase change memory device initiates a method for forming a film. Phase change film forming method of a phase change memory element of the invention disclosed, the method comprising: forming an interlayer insulating film containing silicon lower electrode contacts on the semiconductor substrate and the interlayer insulating film above each deposition temperature is different for different complex elements in and a step of forming a film by depositing a phase change in sequence in the reactor. Process temperature, the phase change material, the deposition