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Growth of heavily C-doped MQW structures by MOVPE for 2–3 μm normal incidence photodetectors
Growth of heavily C-doped MQW structures by MOVPE for 2–3 μm normal incidence photodetectors
1997
E Mao
A. Majerfeld
Keywords:
Doping
Crystallography
Chemistry
Photodetector
Metalorganic vapour phase epitaxy
Angle of incidence
Optoelectronics
Correction
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