Experimental method to measure built-in electric fields in multilayer barrier homo- and heterostructures

In this paper we linked electrophysical properties of multilayer barrier structures based on crystalline and disordered semiconductors with density of electronic states localized in a mobility gap and their energy distribution. We propose experimental method to investigate built-on electric field distribution and its mathematical model. A measuring equipment to realize this method and used test structures is described. The obtained results are analyzed. We marked directions for further researches to improve the method.