Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays

In this work, we present silicon process compatible, stable and reliable (>108 cycles), high non-linearity ratio at a half-read voltage (>5 × 105), high speed (<60 ns), and low operating voltage (<3V) back-to-back Schottky diodes. Materials choice of electrode, the thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory (RRAM) arrays.