The Investigation of Material Modification for SiO2, Si3N4 Film and Photo-resist using High-Dose Ion Implantation Technique

We studied material modification of SiO 2 , Si 3 N 4 and photo-resist film by using high-dose ion implantation technique. The both wet and dry etching rate can be controlled by selecting the ion species and implantation dose. The wet etching rate of SiO 2 film can be changed both increase and decrease direction. The dry etching rate against CF 4 plasma is increased by P+implantation for SiO 2 film and by N+implantation for Si 3 N 4 film, respectively. For photo-resist film, N+implantation can improve the selectivity during plasma etching without degradation of removal characteristics. Those techniques can be quite useful for fabrication process of CMOS devices.