Electrical properties of ultrathin stacked SiO2/ZrO2 gate dielectrics

In this paper, we report the electrical properties of ultrathin stacked SiO 2 /ZrO 2 gate dielectrics deposited on p-type silicon wafer. The effective dielectric constant of the stacked layer is found to be 12.2 and a constant current stressing shows the evidence of positive charges in the stacked layer.