Obtaining advantages of a strain with a UV-hardening in the production of replacement gate transistors

A method of forming a semiconductor structure includes forming a stress-inducing layer over one or more partially completed field effect transistor (FET), which are arranged on a substrate, which include one or more partially completed FET devices sacrificial dummy gate structures; planarizing the stress-inducing layer and removing the sacrificial dummy gate structures; and subsequent to planarizing the stress-inducing layer and removing the sacrificial dummy gate structures, performing a ultraviolet (UV) cure the stress-inducing layer to a value of a partially completed by the stress inducing layer on channel regions of the one or more to increase FET structures applied starting tension.