Analysis of the accuracy of several methods for determining the concentration of 11B+ implanted silicon

Abstract The concentration of 11 B + in silicon has been determined by a number of different analytical techniques. Several commercial vendors provided silicon wafers implanted with 11 B + ions over a wide range of fluence (4 × 10 13 – 3 × 10 16 11 B/cm 2 ) and energy (300 eV–10 keV) for evaluation. The techniques used in this evaluation included the following: Elastic recoil detection (ERD) using 12 MeV F 4+ ions, nuclear reaction analysis (NRA) using the 11 B(p,α) 8 Be* reaction and secondary ion mass spectroscopy (SIMS). The accuracy and potential drawbacks of each of these techniques is discussed.