Anomalous transient photocurrent in disordered semiconductors: theory and experiment

Abstract Anomalous transient photocurrents are theoretically and experimentally studied in amorphous As 2 Se 3 . At high photogeneration rates a maximum of photocurrent I ph ( t ) is formed by two asymptotes I ph ∼ t α and I ph ∼ t −(1−α) 2 . At intermediate generation level the portion of a quasi-stationary current occurs between the two asymptotics due to monomolecular recombination, though the current decay towards the steady state is still governed by bimolecular recombination. At low generation rates the transition into steady-state is determined by monomolecular recombination alone.