Enhancement-Mode InGaAs/InAlAs/InP High Electon Mobility Transistor with 0.1 µm Gate

We present state-of-the-art performance of 0.1 µm gate enhancement-mode (E-mode) InGaAs/InAlAs/InP high electron mobility transistors (HEMTs) fabricated on 3-inch wafers in a production environment. The E-mode HEMTs have transconductance of 1180 mS/mm, cutoff frequency of 210 GHz, and less than 1 mA/mm Idss (drain current at a gate bias of zero volts), measured at a drain bias of 1 V. The device characteristics make the E-mode HEMTs suitable candidates for ultra-high-speed analog and digital applications. Enhancement-mode HEMT devices and low noise amplifiers utilizing E-mode HEMTs, which were fabricated on 3-inch wafers in TRW's InP production line, demonstrated excellent repeatability, performance, yield, and uniformity.