Effect of γ-radiation on electrophysical properties of metal silicide-silicon contacts

An effect of γ-radiation on the electrophysical properties of the contacts of platinic silicide Pt 2 Si-silicon with the Schottky barrier is investigated. It is established that under the γ-irradiation, in the contact structures Pt 2 Si-n-Si, some changes take place at the interface and in the semiconductor space charge region (SCR), which are associated with a change in the role of deep levels in the charge transfer process. It is shown that for small radiation doses, a decrease in the deep level concentration that leads to a change in the mechanism of the current transfer occurs. The hypothesis that the defect interaction, including the interaction in the transition layer, that is important for the defect generation under the γ-irradiation is proposed.