Large Gauge Factor of Hot Wire Chemical Vapour Deposition In-Situ Boron Doped Polycrystalline Silicon

Polysilicon piezoresistors with a large longitudinal gauge factor (GF) of 44 have been achieved using in-situ boron doped hot-wire chemical vapour deposition (HWCVD). This GF is a consequence of a high quality p-type doped polysilicon with a crystal volume of 97% and an average grain size of 150 nm, estimated using Raman spectroscopy and atomic force microscopy (AFM) respectively. The measured minimum Hooge factor associated to the 1/f noise of the polysilicon piezoresistors is 1.4 × 10 −3 . These results indicate that HWCVD polysilicon is a suitable piezoresistive material for micro-electro-mechanical systems (MEMS) applications.