SIMS diagnostics of the structure of nanometer-sized semiconducting layers doped with impurities

The possibility of analyzing the structure of nanometer-sized silicon layers doped with boron and antimony (at a concentration level of 10−2–10−3 at %) via secondary-ion mass spectrometry (SIMS) is investigated. A recoil-atom implantation process has been evaluated from the standpoint of its contribution into the total recorded signal of secondary ions of impurities. It is demonstrated that SIMS can be used for qualitative determination of the structure formed in doped δ-layers.