Microstructure and luminescence properties of GaxIn1-xP/GaAs heterostructure

The GaxIn1-xP/GaAs heterostructures with different x values have been investigated by photoluminescence (PL), energy dispersive spectrum (EDS), and transmission electron microscopy (TEM). Experimental results suggested that the composition of epitaxial layers evidently affected the microstructure of the heterostructures. When x value was close to 0.5, the defects in the epitaxial layer decreased, and the lattice match between film and substrate approached optimum. Meanwhile, the heterostructure provided a high luminescence efficiency.