High Temperature Challenge for PCM as enabler for a wide applications spectrum

Data retention at High Temperature has been considered for long time the main limitation for Phase Change Memory to be adopted for embedded Non Volatile Memory applications. In this paper a review of material engineering activity performed on chalcogenide to improve its High Temperature stability is presented. An optimized Ge x Sb y Te z composition has been selected to make Phase Change Memory compliant with the most demanding automotive and soldering reflow targets. Some insights in the chemical-physical properties of the proposed material are discussed and compared with those of conventional Ge 2 Sb 2 Te 5 . Reliability results obtained from the extrinsic population of multi-megabit arrays are also highlighted. Finally, the robustness of a PCM memory embedded in a Smart Power demonstrator operating with activated Power MOS is shown.