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La 2 O 3 /Si 0.3 Ge 0.7 p-MOSFETs and Ni germano-silicide
La 2 O 3 /Si 0.3 Ge 0.7 p-MOSFETs and Ni germano-silicide
2003
C. H. Huang
C.Y. Lin
H.Y. Li
W. J. Chen
Albert Chin
P. Mei
Keywords:
Electrical engineering
Silicide
Computer science
Engineering physics
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