Investigation of the Annealing Behaviour of Implanted Nitrogen in n-type InP

Concentration profiles of nitrogen in vacuum-annealed n-type single crystal (100) InP implanted with 1×10 16 30-keV 15 N + ions cm -2 have been studied by the secondary ion mass spectrometry (SIMS) and nuclear resonance broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford backscattering spectrometry (RBS) and channeling. Annealing the InP samples led to loss and redistribution of nitrogen in the temperature range from 575 °C to 675 °C. At temperatures from 575 °C to 600 °C rapid migration of nitrogen towards the sample surface was observed. Based on isochronal annealing measurements two different recovery stages were observed. The recovery energies for nitrogen migration and recrystallization are 2.9 and 3.0 eV.