Broadened Angle-Insensitive Near-Perfect Absorber Based on Mie Resonances in Amorphous Silicon Metasurface.

A broadband near-perfect absorber is analyzed by an amorphous silicon (a-Si) hook shaped nanostructure metasurface. The transmission and reflection coefficients of the metasurface are investigated in the point electric and magnetic dipole approximation. By combining square and semicircle nanostructures, the effective polarizabilities of the a-Si metasurface calculated based on discrete dipole approximation (DDA) exhibit broadened peaks of electric dipole (ED) and magnetic dipole (MD) Mie resonances. The optical spectra of the metasurface are simulated with different periods, in which suppressed transmission are shifted spectrally to overlap with each other, leading to broadened enhanced absorption induced by interference of ED and MD Mie resonances. The angle insensitive absorption of the metasurface arrives 95% in simulation and 85% in experiment in spectral range from 564 nm to 584 nm, which provides potential applicability in nano-photonic fields of energy harvesting and energy collection.