Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging
2009
Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging is a significant issue due to lowered
throughput and potential effects on imaging performance. In this work, a series of carbon contamination experiments
were performed on a patterned EUV mask. Contaminated features were then inspected with a reticle scanning electron
microscope (SEM) and printed with the SEMATECH Berkeley Microfield-Exposure tool (MET) [1]. In addition, the
mask was analyzed using the SEMATECH Berkeley Actinic-Inspection tool (AIT) [2] to determine the effect of carbon
contamination on the absorbing features and printing performance.
To understand the contamination topography, simulations were performed based on calculated aerial images and resist
parameters. With the knowledge of the topography, simulations were then used to predict the effect of other thicknesses
of the contamination layer, as well as the imaging performance on printed features.
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