Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method

Two SiC single crystal ingots were prepared using sublimation PVT techniques through the different process procedure and then their crystal quality was systematically compared, because the present research was focused to improve the quality of SiC crystal by modifying the initial stage of the PVT growth. Before the main growth step for growing SiC bulk crystal, initial stage period where growth rate was kept to relatively low rate of