Molecular Dopants and High Mass Dopants for HALO and Extension Implantation

Diffusion-less activation were realized for the 650degC SPE, >1300degC flash and 900degC spike anneals. For pSDE all boron dopant species (BF 2 , B 10 H 14 and B 18 H 22 ) achieved high quality junctions with flash annealing. With 900degC spike either B 10 H 14 or B 18 H 22 can be used while with 650degC SPE annealing only B 18 H 22 can be used. For pHALO using In no difference in activation level could be seen but significant differences in junction leakage was observed. No difference between BF 2 and B 10 H 14 HALO activation could be seen for each annealing condition and SPE annealing resulted in the worse activation level. For nSDE with flash annealing As, As 2 and Sb activation levels were similar while P 2 was 25% better. With SPE and 900degC spike Sb gave the best activation. For nHALO As, As 2 and Sb activation levels were similar for all annealing conditions with SPE resulting in 2x lower activation. Doubling the As 2 dose improved SPE activation by 2x.