The Research on Static Characteristics of 1700V/100A Planner NPT-IGBT

A 1700V/100A NPT-IGBT was designed by process simulation, which had an internal transparent collector and a planner cell structure. The Static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose or the drive-in time of the p-well. The saturation voltage of the device can be adjusted by changing injection dose of the p-well or the internal transparent collector. This device was fabricated using a self-aligned process, the test results show that the breakdown voltage is more than 2100V, the saturation voltage is between 2.5V and 2.7V and the threshold voltage is between 3.9V and 5.9V, which are similar with the simulation results.