Test result of the synchrotron radiation experiments using the counting-type SOI pixel for low-energy x-rays

Application of the Silicon-On-Insulator (SOI) technology to a pixelated detector is expected for the imaging experiments using synchrotron X-rays. The SOI pixel detector is advantageous to make a fine pixel with low noise, because there is no mechanical bump bonding. Because the soft X-ray experiments like the surface X-ray scattering (SXS) and diffraction (SXRD) are very important for the surface analysis, we have started to develop a pulse-counting type SOI pixel which is sensitive to low–energy X-rays down to 2 keV. A test-element-group of CPIXPTEG2, was evaluated by using synchrotron X-rays. The CPIXPTEG2 was designed with the double-SOI technology and its total thickness was 75 µm for a smaller dispersion of the charges collected inside the sensor. The non-melting laser annealing was employed in the ground backside to suppress dopant diffusion during activation. We will report on the test results of CPIXPTEG2 using 6 keV X-rays.