Copper, Selenium 비율 및 Selenization에 따른 입자기반 CIGS 박막의 제조 및 특성에 관한 연구

We have prepared and characterized particle based CIGS thin films using a thermal evaporator. As the copper rate, selenium rate changed, CIGS particles were obtained at 240?C for 6 hours from the reaction of CuCl₂, InCl₃, GaCl₃ and Se powder in solvent. The CIGS thin films were deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Vis-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).