Graphene field-effect transistor using gated ferroelectric thin film

Abstract A graphene-based ferroelectric field-effect transistor (GFE-FET) has been fabricated using few-layer graphene sheets (FLGS) as channel layer and barium titanateBaTiO3 (BTO) as gate insulating layer. The FLGS and BTO were prepared by electrochemical and sol-gel methods respectively. The prepared materials have been characterized by XRD, SEM, UV–Vis, FTIR, and Raman spectroscopy. The performance of GFE-FET was assessed and obtained reasonably high field-effect mobility ∼4.2 × 104 cm2V–1S−1 with on/off ratio of about 103. The obtained results of the fabricated GFE-FET ensure incredible opportunity for various applications mostly in the electronic industry as an alternative to semiconductors.