Effect of electron irradiation on the electrical properties of n-type Pb1−xSnxTe (x⋍2) alloys

The effect of electron bombardment (Tin⋍300 K, E=6 MeV, Φ⩽4×1017 cm−2) on the electrical properties of n-type Pb1−xSnxTe has been studied. Electron bombardment decreases the electron concentration and produces conductivity-type n-p conversion. The difference rate of the donor-and acceptor-type defect generation as a result of bombardment has been determined. Anomalies are detected in the temperature and magnetic-field dependences of the electrical parameters of the bombardment samples. These anomalies are associated with the appearance of a hole-enriched surface layer as a result of electron bombardment.