Silicon quantum detectors with large photosensitive surface

Semiconductor light detectors are the part of vision and image processing systems. Pulse amplitude distribution of silicon avalanche photodiodes with photosensitive surface 7 mm2 is investigated using measurement computer system. Amplitude characteristics in the photon-counting mode are studied depending on the supplied overvoltage, laser intensity and photosensitive surface area. It is shown that changing the supplied overvoltage and photosensitive surface area causes increase / decrease of the peaks number on pulse-amplitude distribution curve due to several microplasmas in the region of space charge.