The Electrical and Compositional Properties of AlN ‐ Si Interfaces

Aluminum nitride thin films on silicon were electrically evaluated as a possible electrical insulator. The films were prepared by atmospheric pressure metal-organic chemical vapor deposition (MOCVD) over the temperature range from 300 to 500 o C. The thickness and refractive index of the AlN films was determined by ellipsometry. The electrical and compositional properties of the films were examined by the capacitance-voltage (C-V), ac conductance, and Auger electron spectroscopy (AES). The results suggest that the index of refraction and the film compositions are strongly dependent on the deposition temperature