Low-temperature CVD growth of carbon nanotubes for field emission application

Abstract For field emission application, carbon nanotube emitters were synthesized on catalyst-mixed thick-film electrode lower than 500 °C by chemical vapor deposition (CVD) method. Mixtures of Ni/tetraethyl silicate (TEOS) and conducting Ag powders were applied to fabricate the electrode by screen-printing processes. These processes are simple, low cost and easy to scale up for large sized panels. The field emission properties performed uniform emission image and high brightness (no less than 500 nits). The turn-on electric field was about 3.85 V/μm with an emission current destiny of 10 μA/cm 2 , and the achieved current density was 1 mA/cm 2 driven by 5 V/μm.